 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification 2SA1116 isc Silicon PNP Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) *High Power Dissipation *Complement to Type 2SC2607 APPLICATIONS *Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature -5 A PC 150 W Tj 150 Tstg Storage Temperature -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification 2SA1116 isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -200 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.0 V ICBO Collector Cutoff Current VCB= -200V; IE= 0 -100 A IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -100 A hFE DC Current Gain IC= -5A ; VCE= -4V 30 fT Current-Gain--Bandwidth Product IE= 0.5A; VCE= -12V 20 MHz Switching Times tr Rise Time 0.3 s tstg Storage Time IC= -5A, RL= 12, IB1= -IB2= -0.5A, VCC= -60V 0.9 s tf Fall Time 0.2 s isc Websitewww.iscsemi.cn |
Price & Availability of 2SA1116
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |